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| TK13A65U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK13A65U Switching Regulator Applications 3.2 0.2 10 0.3 Unit: mm 2.7 0.2 A 3.9 3.0 1.14 0.15 2.8 MAX. 2.54 1 23 2.6 0.1 13 0.5 4.5 0.2 * * * * Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: Yfs = 8.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 650 V) Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 650 30 13 26 40 86 13 4.0 150 -55 to 150 A W mJ A mJ C C Unit V 0.64 0.15 0.69 0.15 0.2 M A 2.54 V Pulse (t = 1 ms) (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range 1: Gate 2: Drain 3: Source JEDEC JEITA TOSHIBA SC-67 2-10U1B Weight : 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods'') and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit Internal Connection 15.0 0.3 2 C/W C/W Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25 C (initial), L = 0.9 mH, RG = 25 , IAR = 13 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution. 3 1 1 2009-03-24 TK13A65U Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 13 A Duty 1%, tw = 10 s 10 V VGS 0V 50 ID = 6.5 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V VDS = 650 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min 650 3.0 2.0 Typ. 0.32 8.0 950 47 2300 30 65 8 80 17 10 7 Max 1 100 5.0 0.38 pF Unit A A V V S ns Switching time Fall time Turn-OFF time Total gate charge Gate-source charge Gate-drain charge RL = 31 VDD 200 V nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 430 7.0 Max 13 26 -1.7 Unit A A V ns C Marking Note 4 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment Note 4 K13A65U Part No. (or abbreviation code) Lot No. 2 2009-03-24 TK13A65U ID - VDS 15 Common source Tc = 25C Pulse test 10 8 7.5 7.3 25 10 20 ID - VDS 8 Common source Tc = 25C Pulse test 7.5 15 7.3 10 7 12 (A) ID 9 7 6.8 Drain current 6 6.5 3 Drain current ID (A) VGS = 6 V 5 6.5 VGS = 6 V 0 0 2 4 6 8 10 0 0 10 20 30 40 50 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 VDS - VGS 10 16 VDS (V) Common source VDS = 10 V Pulse test 8 Common source Tc = 25C Pulse test ID (A) 12 Drain-source voltage 6 ID = 13 A 4 Drain current 8 100 25 Tc = -55C 4 6.5 2 3.3 0 0 0 2 4 6 8 10 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID 100 Common source VDS = 10 V Pulse test Tc = -55C 10 Common source Tc = 25C Pulse test RDS (ON) - ID 10 Drain-source ON-resistance RDS (ON) () Forward transfer admittance Yfs (S) 100 1 25 1 VGS = 10 V 0.1 0.1 1 10 100 0.1 0.1 1 10 100 Drain current ID (A) Drain current ID (A) 3 2009-03-24 TK13A65U RDS (ON) - Tc 1.5 IDR - VDS 100 Common source Tc = 25C Pulse test Drain-source ON-resistance RDS (ON) () 1.2 IDR 0.9 6.5 0.6 13 ID = 3.3 A 0.3 (A) 10 Common source VGS = 10 V Pulse test Drain reverse current 1 10 5 3 1 VGS = 0 V 0.9 1.2 1.5 0.1 0 -80 -40 0 40 80 120 160 0 0.3 0.6 Case temperature Tc (C) Drain-source voltage VDS (V) C - VDS 10000 5 Vth - Tc Vth (V) Gate threshold voltage (pF) 1000 Ciss 4 Coss 100 3 Capacitance C 2 10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 10 Crss 1 Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160 200 1 0.1 100 0 -80 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 50 500 Dynamic input/output characteristics VDS (V) 20 Common source ID = 13 A Tc = 25C Pulse test 16 200V 300 VDD = 100V 12 (W) 40 400 VDS PD Drain power dissipation Drain-source voltage 400V 20 200 VGS 100 8 10 4 0 0 40 80 120 160 200 0 0 6 12 18 24 0 30 Case temperature Tc (C) Total gate charge Qg (nC) 4 2009-03-24 Gate-source voltage 30 VGS (V) TK13A65U rth - tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 3.125C/W 100 1m 10m 100m 1 10 0.01 0.001 10 Pulse width tw (s) Safe operating area 100 100 EAS - Tch EAS (mJ) Avalanche energy ID max (Pulse) * ID max (Continuous) 100 s * 10 1 ms * 80 (A) Drain current ID 60 1 DC operation Tc = 25C 40 0.1 20 0.01 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 10 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) VDSS max 100 1000 Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS WAVEFORM TEST CIRCUIT RG = 25 VDD = 90 V, L = 0.9 mH AS = 1 B VDSS L I2 B - VDD 2 VDSS 5 2009-03-24 TK13A65U RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-03-24 |
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